j.s.iis.u ^zmi-l.onducto'i o^ c/ , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA1859A description ? collector-emitter breakdown voltage- : v(br)ceo=-180v(min) ? complement to type 2sc4883a applications ? designed for audio output driver and tv velocity-modulation applications. absolute maximum ratings(ta=25t:) i 1 2 3 pin 1.base 2.collector 3. emitter to-220f package symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @tc=25r junction temperature storage temperature value -180 -180 -6 -2 -1 20 150 -55-150 unit v v v a a w ?c r e f \ ' - ? - d - n - 9 h k dim a b c d f h j k l h q r s u - c - - 5- -r- j . . m win 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 u in max 15.05 10.10 4.60 0.90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.90 6.60 a nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj seini-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1859A electrical characteristics tj=25"c unless otherwise specified symbol v(br)ceo vce(sat) icbo iebo hfe cob ft parameter collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc=-10ma; ib= 0 lc= -0.7a; ib= -70ma vcb=-180v;ie=0 veb= -6v; lc= 0 lc=-0.7a;vce=-10v le=0; vcb=-10v;f= 1mhz ie=0.7a;vce=-12v min -180 60 typ. 30 60 max -1.0 -10 -10 240 unit v v ma (ja pf mhz switching times ton tstg tf turn-on time storage time fall time lc= -1a, rl= 20q , ib1=.|b2=-0.1a, vcc= -20v 0.5 1.0 0.5 u s m s u s
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